• [1]

    . ZHANG Ting-Qing, LIU Jia-Lu, LI Jian-Jun et al. Acta Physica Sinica, 1999, 48(12): 2299-2303 (in Chinese)2. FAN Long, REN Di-Yuan, ZHANG Guo-Qiang et al. Chi-nese Journal of Semiconductors, 2000, 21(4): 383-387 (inChinese)3. HE Bao-Ping, WANG Gui-Zhen, ZHOU Hui et al. Acta Physica Sinica, 2003, 52(1): 188-191 (in Chinese)4. HE Bao-Ping, WANG Gui-Zhen, GONG Jian-Chen et al.Acta Physica Sinica, 2003, 52(9): 2239-2243(in Chinese)5. Stassinopoulos E G, Brucker G J, Gunten O Van et al.IEEE Trans. Nucl. Sci., 1984, 31(6): 1444-14476. Tallon R W, Ackerman M R, KempW T et al. IEEE Trans.Nucl. Sci., 1985, 32(6): 4393-43987. Brucker G J, Van Gunten O, Stassinopoulos E G et al.IEEE Trans. Nucl. Sci., 1983, 30(6): 4157-4161