Impact factor of Chinese Physics C is 3.6 in 2023 Impact factor of Chinese Physics C is 3.6 in 2022 2021 Impact Factor 2.944
Advanced Search
×
近期发现有不法分子冒充我刊与作者联系，借此进行欺诈等不法行为，请广大作者加以鉴别，如遇诈骗行为，请第一时间与我刊编辑部联系确认（《中国物理C》（英文）编辑部电话：010-88235947,010-88236950），并作报警处理。
本刊再次郑重声明：
（1）本刊官方网址为cpc.ihep.ac.cn和https://iopscience.iop.org/journal/1674-1137
（2）本刊采编系统作者中心是投稿的唯一路径，该系统为ScholarOne远程稿件采编系统，仅在本刊投稿网网址（https://mc03.manuscriptcentral.com/cpc）设有登录入口。本刊不接受其他方式的投稿，如打印稿投稿、E-mail信箱投稿等，若以此种方式接收投稿均为假冒。
（3）所有投稿均需经过严格的同行评议、编辑加工后方可发表，本刊不存在所谓的“编辑部内部征稿”。如果有人以“编辑部内部人员”名义帮助作者发稿，并收取发表费用，均为假冒。
                  
《中国物理C》（英文）编辑部
2024年10月30日
Chinese Physics C> 2013, Vol. 37> Issue(6) : 066001 DOI: 10.1088/1674-1137/37/6/066001

Modeling the applicability of linear energy transfer on single event upset occurrence

  • Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.
      PCAS:
  • 加载中

  • References

    [1] McKay K G, McAfee K B. Phys. Rev., 1953, 91: 1079-1084[2] Dicello J F, Wasiolek M, Zaider M. IEEE Trans. Nucl. Sci., 1991, 38: 1203-1209[3] Stapor W J, McDonald P T, Knudson A R et al. IEEE Trans. Nucl. Sci., 1988, 35: 1585-1590[4] Dodd P E, Schwank J R, Shaneyfelt M R et al. IEEE Trans. Nucl. Sci., 2007, 54: 889-893[5] Dodd P E, Schwank J R, Shaneyfelt M R et al. IEEE Trans. Nucl. Sci., 2007, 54: 2303-2311[6] Warren K M, Weller R A, Mendenhall M H et al. IEEE Trans. Nucl. Sci., 2005, 52: 2125-2131[7] Reed R A, Weller R A, Mendenhall M H et al. IEEE Trans. Nucl. Sci., 2007, 54: 2312-2321[8] Weller R A, Reed R A, Warren K M et al. IEEE Trans. Nucl. Sci., 2009, 56: 3098-3108[9] Weller R A, Schrimpf R D, Reed R A et al. IEEE Trans. Nucl. Sci., 2010, 57: 1726-1746[10] Agostinelli S, Allison J, Amako K et al. Nucl. Instrum. Methods Phys. Res. A, 2003, 506: 250-303[11] Huhtinen M, Faccio F. Nucl. Instrum. Methods Phys. Res. A, 2000, 450: 155-172[12] Warren K M. Sensitive Volume Models for Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environment (Ph. D Thesis). Tennessee: Vanderbilt University, 2010[13] Ball D R, Warren K M, Weller R A et al. IEEE. Trans. Nucl. Sci., 2006, 53: 1794-1798[14] Loke A L S. Process Integration Issues of Low-Permittivity Dielectrics with Copper for High-Performance Interconnects (Ph. D Thesis). Stanford: Stanford University, 1999[15] Shockley W. Solid State Elec., 1961, 2: 35-67[16] Cucinotta F A, Katz R, Wilson J W et al. Faculty Publications, Dept of Physics and Astronomy, 1996, 62[17] Waligorski M P R, Hamm R N, Katz R. Int. J. Raiat. Inst., 1986, 11: 309-319

  • Access

    加载中

Get Citation
GENG Chao, LIU Jie, ZHANG Zhan-Gang, XI Kai, GU Song, HOU Ming-Dong, SUN You-Mei, DUAN Jing-Lai, YAO Hui-Jun, MO Dan and LUO Jie. Modeling the applicability of linear energy transfer on single event upset occurrence[J]. Chinese Physics C, 2013, 37(6): 066001. doi: 10.1088/1674-1137/37/6/066001
GENG Chao, LIU Jie, ZHANG Zhan-Gang, XI Kai, GU Song, HOU Ming-Dong, SUN You-Mei, DUAN Jing-Lai, YAO Hui-Jun, MO Dan and LUO Jie. Modeling the applicability of linear energy transfer on single event upset occurrence[J]. Chinese Physics C, 2013, 37(6): 066001.  doi: 10.1088/1674-1137/37/6/066001 shu
Milestone
Received: 2012-07-26
Revised: 1900-01-01
Article Metric

Article Views(1993)
PDF Downloads(272)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Modeling the applicability of linear energy transfer on single event upset occurrence

    Corresponding author: GENG Chao,
    Corresponding author: LIU Jie,
  • Received Date: 2012-07-26
  • Accepted Date: 1900-01-01
  • Available Online: 2013-06-05

Abstract: Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.

    HTML

Reference (1)

目录

Link
IOPScience
SCOAP3
arXiv
Chinese Physical Society
Journal information
Introduction
Editorial Board
Others
Subscribe
Contact us
QQ: 1307685413
Tel: +86-010-88235947
Fax: +86-010-88233126
E-mail: cpc@ihep.ac.cn

  • CPC Website

  • IOP Website

  • CPC WeChat

Copyright © Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Beijing 100049, China 京ICP备05002789号-1

Supported by: Beijing Renhe Information Technology Co. Ltd  E-mail: info@rhhz.net

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return