Test of a fine pitch SOI pixel detector with laser beam

Yi Liu; Yunpeng Lu; Xudong Ju; Qun Ou-Yang

doi:10.1088/1674-1137/40/1/016202

Chinese Physics C> 2016, Vol. 40> Issue(1) : 016202 DOI: 10.1088/1674-1137/40/1/016202

Test of a fine pitch SOI pixel detector with laser beam

Yi Liu ^1,2,3,, ,
Yunpeng Lu ^1,2,, ,
Xudong Ju ^1,2,3 ,
Qun Ou-Yang ^1,2

1.
State Key Laboratory of Particle Detection and Electronics, Beijing 100049, China
2.
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
3.
University of Chinese Academy of Sciences, Beijing 100049, China

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Abstract：
A silicon pixel detector with fine pitch size of 19 μm×19 μm, developed based on SOI (silicon-on-insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative method for particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to simulate the tracks of MIPs (minimum ionization particles) in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, the signal amplitude as a function of the applied bias voltage was measured for this SOI detector, deepening understanding of its depletion characteristics.
- silicon pixel detector ,
- SOI ,
- infrared laser

References

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Yi Liu, Yunpeng Lu, Xudong Ju and Qun Ou-Yang. Test of a fine pitch SOI pixel detector with laser beam[J]. Chinese Physics C, 2016, 40(1): 016202. doi: 10.1088/1674-1137/40/1/016202

Yi Liu, Yunpeng Lu, Xudong Ju and Qun Ou-Yang. Test of a fine pitch SOI pixel detector with laser beam[J]. Chinese Physics C, 2016, 40(1): 016202. doi: 10.1088/1674-1137/40/1/016202 shu

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Received: 2015-03-04

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Supported by National Natural Science Foundation of China (11375226)

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Test of a fine pitch SOI pixel detector with laser beam

Corresponding author: Yi Liu,

Corresponding author: Yunpeng Lu,

1. State Key Laboratory of Particle Detection and Electronics, Beijing 100049, China

2. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

3. University of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 2015-03-04

Available Online: 2016-01-20

Fund Project: Supported by National Natural Science Foundation of China (11375226)

Abstract: A silicon pixel detector with fine pitch size of 19 μm×19 μm, developed based on SOI (silicon-on-insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative method for particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to simulate the tracks of MIPs (minimum ionization particles) in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, the signal amplitude as a function of the applied bias voltage was measured for this SOI detector, deepening understanding of its depletion characteristics.

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Test of a fine pitch SOI pixel detector with laser beam

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