Development of Si Multi-Strip Detector
- Received Date: 2004-08-20
- Accepted Date: 1900-01-01
- Available Online: 2005-04-05
Abstract: the technics and test results and preliminary applications of si multi–strip detector fabricated by using microelectronic technique were described in this paper. the sensitive area of this kind of detector is 50mm×20mm. the P side surface was divided into equal 16 strips with 140μm spece between two strips ,each one having length of 20mm and width of 3mm. a reverse leakage current less than 2na and an energy resolution of 0.4%–0.9% (for 239 Pu α particles) and a crosstalk between neighboring strips of 4%–8% have been obtained when the detector was operated in full depletion condition. an energy resolution of ~0.27% was achieved for measuring of 7.2mev/u c ions.