Development of Si Multi-Strip Detector

TAN Ji-Lian; JIN Gen-Ming; WANG Hong-Wei; DUAN Li-Min; YUAN Xiao-Hua; WANG Xiao-Bing; LI Song-Lin; LU Zi-Wei; XU Hu-Shan; NING Bao-Jun; TIAN Da-Yu; WANG Wei; ZHANG Lu

Chinese Physics C> 2005, Vol. 29> Issue(4) : 383-386

Development of Si Multi-Strip Detector

Institute of Modern Physics,The,CAS,Lanzhou,7300002 Institute of Microelectronics,Peking University,Beijing,100871

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the technics and test results and preliminary applications of si multi–strip detector fabricated by using microelectronic technique were described in this paper. the sensitive area of this kind of detector is 50mm×20mm. the P side surface was divided into equal 16 strips with 140μm spece between two strips ,each one having length of 20mm and width of 3mm. a reverse leakage current less than 2na and an energy resolution of 0.4%–0.9% (for 239 Pu α particles) and a crosstalk between neighboring strips of 4%–8% have been obtained when the detector was operated in full depletion condition. an energy resolution of ~0.27% was achieved for measuring of 7.2mev/u c ions.

References

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. 　Hyams B , Koetz Cern U et al . Nucl . Instr. Meth. , 1983 , 205 :99 —1052.　Dutta S ,Berger Get al . Nucl . Instr. Meth. In Phys. Res. , 2002 ,A476 :739 —7433.　Kemmer J ,Burger P , Henck R et al . IEEE Trans. Nucl . Sci . , 1982 ,NS229 :733 —7374.　NING Bao-Jun , ZHANG Tai-Ping , ZHANG Lu et al . Chinese Journal of Semiconductors , 2002 , 23(2) :174 —177 (in Chinese)(宁保俊,张太平,张录等. 半导体学报,2002 ,23(2) :174 —177)5.　Sueva D , Spassov V , Chikov N et al . IEEE Trans. Nucl . Sci . , 1993 ,NS240 :2576.　Dulla Betta G F , Pighatel GU et al . Nucl . Instr. Meth. In Phys.Res. , 1997 , A395 :344

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TAN Ji-Lian, JIN Gen-Ming, WANG Hong-Wei, DUAN Li-Min, YUAN Xiao-Hua, WANG Xiao-Bing, LI Song-Lin, LU Zi-Wei, XU Hu-Shan, NING Bao-Jun, TIAN Da-Yu, WANG Wei and ZHANG Lu. Development of Si Multi-Strip Detector[J]. Chinese Physics C, 2005, 29(4): 383-386.

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Received: 2004-08-20
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Development of Si Multi-Strip Detector

Corresponding author: TAN Ji-Lian,

Institute of Modern Physics,The,CAS,Lanzhou,7300002 Institute of Microelectronics,Peking University,Beijing,100871

Received Date: 2004-08-20

Accepted Date: 1900-01-01

Available Online: 2005-04-05

Abstract: the technics and test results and preliminary applications of si multi–strip detector fabricated by using microelectronic technique were described in this paper. the sensitive area of this kind of detector is 50mm×20mm. the P side surface was divided into equal 16 strips with 140μm spece between two strips ,each one having length of 20mm and width of 3mm. a reverse leakage current less than 2na and an energy resolution of 0.4%–0.9% (for 239 Pu α particles) and a crosstalk between neighboring strips of 4%–8% have been obtained when the detector was operated in full depletion condition. an energy resolution of ~0.27% was achieved for measuring of 7.2mev/u c ions.

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Development of Si Multi-Strip Detector

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