Studies on Wehnelt of Electron-Beam Accelerator

YIN Ming; ZHOU Xiao-Yan

Chinese Physics C> 2005, Vol. 29> Issue(3) : 301-304

Studies on Wehnelt of Electron-Beam Accelerator

YIN Ming ^, ,
ZHOU Xiao-Yan

School of Control Science and Engineering,Electron-Beam Laboratory,Shandong University,Jinan 250061,China2 School of Information Science and Engineering,Shandong University,Jinan 250061,China

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Abstract：
Electron beam can be focused into a small spot with the diameter of only about nanometers theoretically,and easily controlled.It cannot be replaced by any other micro fabrication techniques in mask-making of VLSI (Very Large-Scale Integration).Based on the electron gun of SDS-3 electron beam lithography machine,the concave hyperboloid Wehnelt(oxide-coated cover)of accelerator is discussed.The electron trajectories and potential distribution are given.Electrons from the gun accelerated by a high voltage reached a target　of silicon piece(In front of the aperture)via the Wehnelt.Finally,spots of E-beam in the silicon piece and the geometry schematics for Wehnelt of accelerator are given.

References

[1]

. YIN Ming, SUN Xiao-jun. HEP NP, 2004, 28( 4) : 304 -307(in Chinese)(尹明,孙晓军,高能物理与核物理,2004, 28(4):304-307)2. WANG Jun-Hua, SHEN Lian-Guan, WANG Gui-Cheng et al . HEP NP, 2001, 25( 11) : 1120-1127 (in Chinese)(王绮华,沈连官,王贵诚等,高能物理与核物理,2001,25(11):1120-1127 )3. Yamagat e Y, Mihara S, Nishioki N. IEEE MEMS, 1996, 48: 307-3114. Dewolf P, Brazel E. Sol id Stat e Technology, 2000, 38( 9) : 117-1255. Bakharaen A A, Nurgazizon N I. Surface Science, 2001, 482-485:1319. 13246. ZHANG Yong-Hui , CHEN Hong-Bin, KANG Qiang.HEP NP, 2002,26( 8) : 876-879(in Chinese)(张永辉,陈洪斌,康强.高能物理与核物理, 2002, 26 ( 8 ) : 876-879)7. WANG Shu-Hong, WANG Jiu-Qing, YE Qiang. HEP NP, 2002, 26( 12) : 1302(in Chinese)(王书鸿,王九庆,叶强.高能物理rJJ核物理,2002,26(12):1302)8. Pfeiffer H C. Vac Sci Technology, 1999, B17( 11/ 12) : 2566-25769. Fritz. Sience, 2000, 288: 316-32210. Wada Y. Microelectronics, 1998, 29: 601-61111. YIN Ming, ZHANG Yu-lin. Acta Optica Sinica, 2004, 24 ( 3) : 423-426 (in Chinese)(尹明,张玉林.光学学报,2004,24(3):423-426 )

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YIN Ming and ZHOU Xiao-Yan. Studies on Wehnelt of Electron-Beam Accelerator[J]. Chinese Physics C, 2005, 29(3): 301-304.

YIN Ming and ZHOU Xiao-Yan. Studies on Wehnelt of Electron-Beam Accelerator[J]. Chinese Physics C, 2005, 29(3): 301-304. shu

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Received: 2004-06-21
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Studies on Wehnelt of Electron-Beam Accelerator

YIN Ming ^,
ZHOU Xiao-Yan

Corresponding author: YIN Ming,

School of Control Science and Engineering,Electron-Beam Laboratory,Shandong University,Jinan 250061,China2 School of Information Science and Engineering,Shandong University,Jinan 250061,China

Received Date: 2004-06-21
Accepted Date: 1900-01-01
Available Online: 2005-03-05

Abstract: Electron beam can be focused into a small spot with the diameter of only about nanometers theoretically,and easily controlled.It cannot be replaced by any other micro fabrication techniques in mask-making of VLSI (Very Large-Scale Integration).Based on the electron gun of SDS-3 electron beam lithography machine,the concave hyperboloid Wehnelt(oxide-coated cover)of accelerator is discussed.The electron trajectories and potential distribution are given.Electrons from the gun accelerated by a high voltage reached a target　of silicon piece(In front of the aperture)via the Wehnelt.Finally,spots of E-beam in the silicon piece and the geometry schematics for Wehnelt of accelerator are given.