Analysis of Ramping Process of SSRF Booster

LI Hao-Hu; LIU Gui-Min

Chinese Physics C> 2006, Vol. 30> Issue(S1) : 66-68

Analysis of Ramping Process of SSRF Booster

LI Hao-Hu ^, ,
LIU Gui-Min

Shanghai Institute of Applied Physics,CAS,Shanghai 201800,China

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Abstract：
The booster of the Shanghai Synchrotron Radiation Facility (SSRF) is designed to accelerate the electron beam from 100MeV to 3.5GeV in 250ms,with a repetition frequency of 2Hz. Its circumference is 180m with a periodicity of 28 FODO cell. Energy ramping in the booster synchrotron is the one of the important processes that will affect the beam parameters, the time structure and the injection efficiency of the storage ring. In this paper, the ramping process of the SSRF booster is described in detail, such as ramping curves of magnets and RF voltage, eddy current effect and chromaticity correction, phase space evolution during acceleration, etc.

References

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. ZHAO Zhen-Tang, XU Hong-Jie. SSRF: A 3.5 GeV Syn-chrotron Light Source For China. In: Leonid Rivkin ed.Proceeding of EPAC 2004. Lucerne: EPS-AG, 2004. 2365—23672. Carlo J. Bocchetta. A Full Energy Injector For ELETTRA.In: M. Regler ed. Proceeding of EPAC 2000. Vienna: EPS-AG, 2000. 607—6093. Edwards D A, Syphers M J. An Introduction to the Physicsof High Energy Accelerators. New York: John Wiley andSons, Inc., 1993. 110—1154. Le Duff J. Longitudinal Beam Dynamics In Circular Ac-celerators. In: S. Turner. CAS, Fifth General AcceleratorPhysics Course, I. Geneva: CERN. 1994. 289—3115. Walker R P. Radiation Damping. In: S. Turner. CAS, FifthGeneral Accelerator Physics Course, I. Geneva: CERN.1994. 461—4806. Walker R P. Quantum Excitation and Equilibrium BeamProperties. In: S. Turner. CAS, Fifth General AcceleratorPhysics Course, I. Geneva: CERN. 1994. 481—498

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LI Hao-Hu and LIU Gui-Min. Analysis of Ramping Process of SSRF Booster[J]. Chinese Physics C, 2006, 30(S1): 66-68.

LI Hao-Hu and LIU Gui-Min. Analysis of Ramping Process of SSRF Booster[J]. Chinese Physics C, 2006, 30(S1): 66-68. shu

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Received: 2005-12-07
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Analysis of Ramping Process of SSRF Booster

LI Hao-Hu ^,
LIU Gui-Min

Corresponding author: LI Hao-Hu,

Shanghai Institute of Applied Physics,CAS,Shanghai 201800,China

Received Date: 2005-12-07
Accepted Date: 1900-01-01
Available Online: 2006-01-04

Abstract: The booster of the Shanghai Synchrotron Radiation Facility (SSRF) is designed to accelerate the electron beam from 100MeV to 3.5GeV in 250ms,with a repetition frequency of 2Hz. Its circumference is 180m with a periodicity of 28 FODO cell. Energy ramping in the booster synchrotron is the one of the important processes that will affect the beam parameters, the time structure and the injection efficiency of the storage ring. In this paper, the ramping process of the SSRF booster is described in detail, such as ramping curves of magnets and RF voltage, eddy current effect and chromaticity correction, phase space evolution during acceleration, etc.