Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation

LIU Chang-Long

Chinese Physics C> 2005, Vol. 29> Issue(5) : 524-529

Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation

LIU Chang-Long ^,

Department of Physics,School of Sciences,Tianjin University,Tianjin 300072,China2 Tianjin Key Laboratory of Low Dimension Materials Physics and Preparing Technology,Institute of Advanced Materials Physics Faculty of Science,Tianjin 3000723 CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France4 LMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155,F37071 Tours Cedex,France

Abstract
HTML
Reference
Related

PDF

Abstract：
The effects of hydrogen plasma treatment on He-implantation-induced cavities in silicon during subsequent annealing were studied.Silicon samples were first implanted at room temperature with He ions of different energies (40,160 and 1550keV) at the same dose of 5×10¹⁶cm^-2,and then were exposed to high density ECR hydrogen plasma for 30 min at temperature of 250°C.XTEM was applied to study the formation of cavities after an annealing at 800°C for 1h. The results clearly show that the effects of plasma hydrogenation on thermal growth of cavities depend strongly on the He ion energy. No effects were clearly seen in 40 keV He-implantation-induced cavities and a slightly effects were observed in that of 1550 keV He implantation. However,in the case of 160 keV He implantation,additional H plasma treatment could assist the growth of cavities. Further analyses show that the effects were possibly related to the role of hydrogen introduced by plasma hydrogenation.

References

[1]

.Chason E,Picraux S T,Poat e J M et al.Appl.Phys.,1997,J81:6513-65612.Griff ioen C C,Evans J H,de Jong P C et al.Nucl.Instrum.andMethods,1987,B27:417-4213.Follstaedt D M.Appl.Phys.Lett.,1993,62:1116-11184.Van Veen A,Reader A H,Gravest eijn D J et al.Thin Solid Films,1993,241:206-2105.Bruel M.Nucl.Instrum.Methods,1996,B108:313-3196.Godey S,Sauvage T,Ntsoenzok E et al.Appl.Phys.,2000,J87:2158-21617.LIU Chang..Long,Delamare R,Esidor N et al.Mat.Res.Soc.Symp.Proc.,2002,719:229-2348.Mayers S M,Petersen G A,Seager C H.Appl.Phys.,1996,J80:9717-97219.Wong..Leung J,Nygren E,Williams J S.Appl.Phys.Lett.,1995,67.:416-41810.Raneri V,Falica P G,Percolla G et al.Appl.Phys.,1995,J78:3727-373211.Raneri V,Saggio M,Rimini E.Mater.Res.,2000,J15:1449-147712.Corni F,Calzolzri G,Frabboni S et al.Appl.Phys.,1999,J85:1401-140813.Ziegler J P,Biersack J P,Littmark U.The Stopping and Range of Ionsin Solids.New York:Pergamon,198514.Schut H,Van VeenA,Ei jt SH et al.Nucl.Instrum.Methods,2002,B186:94-9915.Ulyashin A G,Job R,Fahrner W R et al.Diffusion and Defects Data,Solid State Phenomena,2002,B82 ! 84:315-31916.LIU C L,Ntsoenzok E,Barthe M F et al.Diffusion and Defects Data,Solid State Phenomena,2004,95 ! 96:307-31217.Peart on J,Corbert J W,Starola M.Hydrogen in Cryst alline Semicon..ductors.Springer..Verlag:Heidelberg,199218.Srikanth K,Ashok S.Appl.Phys.,1991,J70:4779-478519.Sveinbjornsson E O,Anderson G I,Engstrom O.Phys.Rev.,1994,B58:7801-7808

[1]	CHEN Xiao-Fan . Test of Nonstatic Spherical Quark-Gluon Plasma by Two-Pion Interferometry. Chinese Physics C, 2007, 31(2): 173-176.
[2]	S.Biri , E.Fekete , I.Iván , I.Gál . Transformation of the ATOMKI-ECRIS into a Plasma Device. Chinese Physics C, 2007, 31(S1): 156-158.
[3]	G.D.Alton , H.Bilheux . Elementary Theory for Optimum Extraction of Space-Charge-Dominated Ion Beams from Plasma Boundaries. Chinese Physics C, 2007, 31(S1): 201-205.
[4]	ZHAO HUAN-Yu , ZHAO Hong-Wei , MA Xin-Weng , SUN Liang-Ting , ZHANG Xue-Zhen , LI Xi-Xia , WANG Hui , MA Bao-Hua , CAO Yun , FENG Yu-Cheng , ZHU Yu-Hua , SHANG Yong . Measurements of Bremsstrahlung Spectra on SECRAL. Chinese Physics C, 2007, 31(S1): 178-181.
[5]	A.V.Vodopyanov , S.V.Golubev , I.V.Izotov , V.I.Khizhnyak , D.A.Mansfeld , V.A.Skalyga , V.G.Zorin . ECR Plasma with 75 GHz Pumping. Chinese Physics C, 2007, 31(S1): 152-155.
[6]	ZHAO HUAN-Yu , ZHAO Hong-Wei , SUN Liang-Ting , ZHANG Xue-Zhen , SHENG Liu-Si , TIAN Yang-Chao , ZHANG Guo-Bin . Production of EUV Power with SECRAL. Chinese Physics C, 2007, 31(S1): 229-231.
[7]	HUA Jian-Fei , AN Wei-Ming , HUANG Wen-Hui , TANG Chuan-Xiang , LIN Yu-Zheng , GU Yu-Qiu , LIU Hong-Jie , WANG Xiang-Xian , ZHOU Wei-Min , JIAO Chun-Ye , WEN Tian-Shu , HE Ying-Ling , , , , . A Preliminary Experiment of Plasma Electron Acceleration at SILEX-1. Chinese Physics C, 2006, 30(S1): 108-110.
[8]	Efaaf M , ZHANG Wei-Ning , Khaliliasr M , JIN En-Pei , LIU Yi-Ming . Pion Interferometry for Spherical Quark-Gluon Plasma Evolution Sources. Chinese Physics C, 2005, 29(1): 46-49.
[9]	Efaaf M.J. , ZHANG Wei-Ning , Khaliliasr M. , HUO Lei , JIN En-Pei , ZHANG Jing-Bo . Pion Interferometry for Cylindrical Quark-Gluon Plasma Evolution Sources. Chinese Physics C, 2005, 29(5): 467-471.
[10]	LONG Jia-Li , HE Ze-Jun , JIANG Wei-Zhou , MA Yu-Gang , LIU Bo . Dileptons from a Chemically Non-equilibrated Quark-Gluon Plasma. Chinese Physics C, 2004, 28(4): 387-391.
[11]	LIU Chang-Long . Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon. Chinese Physics C, 2004, 28(9): 1013-1016.
[12]	ZHANG Han-Zhong , WANG En-Ke . Critical Behavior of Plasmon Damping Rate in Thermal Scalar Field. Chinese Physics C, 2002, 26(5): 522-529.
[13]	HE Ze-Jun , Zhou Wen-Jie , JIANG Wei-Zhou , ZHU Zhi-Yuan , LIU Bo . Enhancement of Dileptons with Intermediate Masses Produced in QGP. Chinese Physics C, 2001, 25(2): 179-182.
[14]	WANG SuFang , Cavallaro Sl , JIN GenMing , Grzeszczuk A , Zipper W . Binary Reaction and Fusion Reaction in ²⁸Si+¹²C. Chinese Physics C, 2000, 24(10): 933-939.
[15]	HE ZeJun , JIANG WeiZhou , ZHU ZhiYuan , LIU Bo , ZHANG JiaJu . A Signature for the Formation of the Quark-Gluon Plasma in Nucleus-Nucleus Collisions. Chinese Physics C, 2000, 24(5): 462-466.
[16]	Li Panlin , Wu Hua , Xu Mengjie . Dynamics of Phase Transition Including Quark-Fragment Effects foran Expansion Quark-Gluon Plasma. Chinese Physics C, 1997, 21(10): 918-925.
[17]	Hou Defu , Li Jiarong . On the Next to Leading Order Debye Screening Mass in QGP. Chinese Physics C, 1996, 20(6): 533-537.
[18]	Zhang Xiaofei , Li Jiarong . Calculation of Transport Coefficients for Colored Plasma Beyond the Abelian Dominance Approximation. Chinese Physics C, 1994, 18(11): 1043-1050.
[19]	XU Chun-Cheng , CAI Xu . Time Evolution of Colour Screening and Suppression of J/ψ、χ and ψ' by Quark-Gluon Plasma. Chinese Physics C, 1992, 16(1): 51-56.
[20]	HOU De-Fu , LI Jia-Rong . The Restoration of Symmetry and Plasmon Effects at High Temperature and High Density in the Weinberg-Salam Model. Chinese Physics C, 1991, 15(5): 427-436.

Access

Get Citation

LIU Chang-Long. Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation[J]. Chinese Physics C, 2005, 29(5): 524-529.

LIU Chang-Long. Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation[J]. Chinese Physics C, 2005, 29(5): 524-529. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2004-07-30
Revised: 1900-01-01

Article Metric

Article Views(4013)
PDF Downloads(569)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation

Corresponding author: LIU Chang-Long,

Department of Physics,School of Sciences,Tianjin University,Tianjin 300072,China2 Tianjin Key Laboratory of Low Dimension Materials Physics and Preparing Technology,Institute of Advanced Materials Physics Faculty of Science,Tianjin 3000723 CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France4 LMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155,F37071 Tours Cedex,France

Received Date: 2004-07-30

Accepted Date: 1900-01-01

Available Online: 2005-05-05

Abstract: The effects of hydrogen plasma treatment on He-implantation-induced cavities in silicon during subsequent annealing were studied.Silicon samples were first implanted at room temperature with He ions of different energies (40,160 and 1550keV) at the same dose of 5×10¹⁶cm^-2,and then were exposed to high density ECR hydrogen plasma for 30 min at temperature of 250°C.XTEM was applied to study the formation of cavities after an annealing at 800°C for 1h. The results clearly show that the effects of plasma hydrogenation on thermal growth of cavities depend strongly on the He ion energy. No effects were clearly seen in 40 keV He-implantation-induced cavities and a slightly effects were observed in that of 1550 keV He implantation. However,in the case of 160 keV He implantation,additional H plasma treatment could assist the growth of cavities. Further analyses show that the effects were possibly related to the role of hydrogen introduced by plasma hydrogenation.

HTML

Reference (1)

Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article