A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

MENG Xiang-Ti; HUANG Qiang; MA Yan-Xiu; ZHENG Yong-Nan; FAN Ping; ZHU Sheng-Yun

doi:10.1088/1674-1137/32/6/006

Chinese Physics C> 2008, Vol. 32> Issue(6) : 442-445 DOI: 10.1088/1674-1137/32/6/006

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

Abstract
HTML
Reference
Related

PDF

Abstract：
The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹ to 4×10×10cm^－2 and 1×10⁹ to 2×1012cm^－2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×10¹⁰ and 2×10¹² cm^－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

References

[1]

. Dyer C S, Sanderson C, Mugford R et al. IEEE Trans. Nucl.Sci., 2000, 47: 481-4852. Eid E S, Chan T Y, Fossum E R et al. IEEE Trans. Nucl.Sci., 2001, 48: 1796-18063. Bogaerts J, Dierickx B, Mertens R. IEEE Trans. Nucl. Sci.,2002, 49: 1513-15214. MENG Xiang-Ti, KANG Ai-Guo. Study of -Ray Radiation Damage in CMOS Image Sensors, Proc. Chinese Nuclear Society Conf., Wuhan, 2001. 671-673 (in Chinese)5. MENG Xiang-Ti, KANG Ai-Guo. Rare Metals, 2002,21(1): 79-846. MENG Xiang-Ti, KANG Ai-Guo, YOU Zheng. Jpn. J.Appl. Phys., 2002, 41(8B): L919-9217. MENG Xiang-Ti, KANG Ai-Guo, WANG Xing-Yu et al.Semicond. Sci. Technol., 2003, 18: L1-38. HUANG Qiang, MENG Xiang-Ti. Chinese Physics Letters,2007, 24-2: 549-5519. CHEN D T, Fremont C A. Active Pixel with a Pinned Photodiode, 1999, U.S. Patent 588049510. Hopkinson G R. IEEE Trans. Nucl. Sci., 1992, 39-6:2018-2025

[1]	Wen-Chao Dai , Jie-Dong Jiang , Yin Fan , Xiao Liu , Peng-Cheng Chu , Xi-Jun Wu , Xiao-Hua Li . Systematic study of α decay half-life within cluster-formation model. Chinese Physics C, 2026, 50(1): 014103. doi: 10.1088/1674-1137/ae042c
[2]	Wang-Fa Li , Junmou Chen , Qian-Jiu Wang , Zhao-Huan Yu . A Numerical Study on Gauge Symmetry of Electroweak Amplitudes. Chinese Physics C, 2026, 50(2): 1-16.
[3]	Huixiao Duan , Fan Zhang , Kailei Wang , Jun Su . Nuclear temperature of spectator source extracted by neutron spectra in ¹²⁴Sn,¹⁰⁷Sn + ¹²⁰Sn collisions at 600 MeV/nucleon. Chinese Physics C, 2026, 50(2): 1-10.
[4]	Cheng Hu , Xiao-Xiong Zeng . Hawking tunneling radiation with thermodynamic pressure. Chinese Physics C, 2026, 50(1): 015103. doi: 10.1088/1674-1137/ae07b4
[5]	. Probing the cluster structure of ⁶Li with the ⁶Li + ¹²C nuclear reaction at 68 MeV. Chinese Physics C, 2026, 50(1): 014102. doi: 10.1088/1674-1137/ae072b
[6]	Lola Meliyeva , Obid Xoldorov , Olmos Tursunboyev , Shavkat Karshiboev , Sardor Murodov , Isomiddin Nishonov , Bekzod Rahmatov . Theoretical study of Strong gravitational lensing around Dyonic ModMax black hole: constraints from EHT observations. Chinese Physics C, 2025, 49(12): 125102. doi: 10.1088/1674-1137/adf4a0
[7]	Saba Noor , Faisal Akram , Bilal Masud . Study of excited D and D_s mesons in a relativized quark model. Chinese Physics C, 2025, 49(11): 113102. doi: 10.1088/1674-1137/adec50
[8]	Yi Wei Hao , Yi Fei Niu , Zhong Ming Niu . The Role of Fission in Mass Sensitivity Study of the r-process. Chinese Physics C, 2025, 49(): 1-7. doi: 10.1088/1674-1137/adfe55
[9]	. Double-folding analysis of elastic and inelastic ³He-nucleus scattering at 60 MeV. Chinese Physics C, 2025, 49(11): 114101. doi: 10.1088/1674-1137/ade1cb
[10]	Mirjavoxir Mirkhaydarov , Mirzabek Alloqulov , Sanjar Shaymatov . Radiation properties of the accretion disk around a quantum-corrected black hole. Chinese Physics C, 2025, 49(12): 125107. doi: 10.1088/1674-1137/adfa83
[11]	. 2025-9 Contents. Chinese Physics C, 2025, 49(9): 1-3.
[12]	Hanmei Cao , Fanglei Zou , Xiaojun Sun , Jingshang Zhang . Effects of energy levels on the double-differential cross sections of outgoing charged particles for the n+¹⁹F reaction below 20 MeV. Chinese Physics C, 2025, 49(12): 124107. doi: 10.1088/1674-1137/adf49f
[13]	Yang-Yang Xu , De-Xing Zhu , You-Tian Zou , Xi-Jun Wu , Biao He , Xiao-Hua Li . Systematic study on α-decay half-lives of uranium isotopes with a screened electrostatic barrier. Chinese Physics C, 2022, 46(11): 114103. doi: 10.1088/1674-1137/ac7fe8
[14]	Hong-Lei Li , Peng-Cheng Lu , Cong-Feng Qiao , Zong-Guo Si , Ying Wang . Study of the Standard Model and Majorana neutrino contributions to ${ B}^{{ +}} { \to} { K}^{{ (*){ \pm}}}{ \mu}^{ +}{ \mu}^{{ \mp}}$. Chinese Physics C, 2019, 43(2): 023101. doi: 10.1088/1674-1137/43/2/023101
[15]	YAN Jia-Qing , XIE Yu-Guang , HU Tao , LU Jun-Guang , ZHOU Li , QU Guo-Pu , CAI Xiao , NIU Shun-Li , CHEN Hai-Tao . Simulation and performance study of ceramic THGEM. Chinese Physics C, 2015, 39(6): 066001. doi: 10.1088/1674-1137/39/6/066001
[16]	ZHANG Zhou-Li , HE Yuan , ZHANG Bin , LI De-Run , SHI Ai-Min , PAN Gang , DU Xiao-Nan , SUN Lie-Peng . Study of influence of radial matcher section end shape on RFQ cavity frequency. Chinese Physics C, 2014, 38(7): 077007. doi: 10.1088/1674-1137/38/7/077007
[17]	YE Yan-Lin , ZHOU Xiao-Hong , LIU Wei-Ping , MA Yu-Gang , ZHANG Yu-Hu , XU Fu-Rong . Outline of the progress in the study of radioactive nuclear physics and super-heavy nuclei. Chinese Physics C, 2008, 32(S2): 1-7.
[18]	ZHU Xiong-Wei , GAO Jie . Study on ILC bunch compressor. Chinese Physics C, 2008, 32(11): 928-930. doi: 10.1088/1674-1137/32/11/016
[19]	LIU Chang-Long , LU Yi-Ying , YIN LI . Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon. Chinese Physics C, 2005, 29(11): 1107-1111.
[20]	BES Collaboration . Experimental Study of Resonance f₂(1270) in the J/ψ Hadronic Decay. Chinese Physics C, 1993, 17(2): 97-106.

Access

Get Citation

MENG Xiang-Ti, HUANG Qiang, MA Yan-Xiu, ZHENG Yong-Nan, FAN Ping and ZHU Sheng-Yun. A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation[J]. Chinese Physics C, 2008, 32(6): 442-445. doi: 10.1088/1674-1137/32/6/006

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2007-09-10
Revised: 2007-12-02

Article Metric

Article Views(5692)
PDF Downloads(714)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

Corresponding author: ZHU Sheng-Yun,

Received Date: 2007-09-10

Accepted Date: 2007-12-02

Available Online: 2008-06-05

Abstract:

The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹ to 4×10×10cm^－2 and 1×10⁹ to 2×1012cm^－2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×10¹⁰ and 2×10¹² cm^－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

HTML

Reference (1)

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article