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《中国物理C》(英文)编辑部
2024年10月30日

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

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MENG Xiang-Ti, HUANG Qiang, MA Yan-Xiu, ZHENG Yong-Nan, FAN Ping and ZHU Sheng-Yun. A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation[J]. Chinese Physics C, 2008, 32(6): 442-445. doi: 10.1088/1674-1137/32/6/006
MENG Xiang-Ti, HUANG Qiang, MA Yan-Xiu, ZHENG Yong-Nan, FAN Ping and ZHU Sheng-Yun. A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation[J]. Chinese Physics C, 2008, 32(6): 442-445.  doi: 10.1088/1674-1137/32/6/006 shu
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Received: 2007-09-10
Revised: 2007-12-02
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A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

    Corresponding author: ZHU Sheng-Yun,

Abstract: 

The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×109 to 4×10×10cm-2 and 1×109 to 2×1012cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×1010 and 2×1012 cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

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