A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

MENG Xiang-Ti; HUANG Qiang; MA Yan-Xiu; ZHENG Yong-Nan; FAN Ping; ZHU Sheng-Yun

doi:10.1088/1674-1137/32/6/006

Chinese Physics C> 2008, Vol. 32> Issue(6) : 442-445 DOI: 10.1088/1674-1137/32/6/006

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

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Abstract：
The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹ to 4×10×10cm^－2 and 1×10⁹ to 2×1012cm^－2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×10¹⁰ and 2×10¹² cm^－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

References

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MENG Xiang-Ti, HUANG Qiang, MA Yan-Xiu, ZHENG Yong-Nan, FAN Ping and ZHU Sheng-Yun. A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation[J]. Chinese Physics C, 2008, 32(6): 442-445. doi: 10.1088/1674-1137/32/6/006

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Received: 2007-09-10
Revised: 2007-12-02

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沈阳化工大学材料科学与工程学院沈阳 110142

A study of radiation effects of 9 and 12MeV protons on Chinese CMOS image sensor degradation

Corresponding author: ZHU Sheng-Yun,

Received Date: 2007-09-10
Accepted Date: 2007-12-02
Available Online: 2008-06-05

Abstract:

The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹ to 4×10×10cm^－2 and 1×10⁹ to 2×1012cm^－2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×10¹⁰ and 2×10¹² cm^－2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.