Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

LU Wu; ZHENG Yu-Zhan; WANG Yi-Yuan; REN Di-Yuan; GUO Qi; WANG Zhi-Kuan; WANG Jian-An

doi:10.1088/1674-1137/35/2/012

Chinese Physics C> 2011, Vol. 35> Issue(2) : 169-173 DOI: 10.1088/1674-1137/35/2/012

Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

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Abstract：
The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity (ELDRS). After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with <111> orientation was more sensitive to ionizing radiation than that with <100> orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper.

References

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LU Wu, ZHENG Yu-Zhan, WANG Yi-Yuan, REN Di-Yuan, GUO Qi, WANG Zhi-Kuan and WANG Jian-An. Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors[J]. Chinese Physics C, 2011, 35(2): 169-173. doi: 10.1088/1674-1137/35/2/012

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Received: 2010-05-12
Revised: 2010-06-02

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沈阳化工大学材料科学与工程学院沈阳 110142

Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

Received Date: 2010-05-12
Accepted Date: 2010-06-02
Available Online: 2011-02-05

Abstract: The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity (ELDRS). After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with <111> orientation was more sensitive to ionizing radiation than that with <100> orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper.