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2024年10月30日
Chinese Physics C> 2013, Vol. 37> Issue(6) : 066001 DOI: 10.1088/1674-1137/37/6/066001

Modeling the applicability of linear energy transfer on single event upset occurrence

  • Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.
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    [1] McKay K G, McAfee K B. Phys. Rev., 1953, 91: 1079-1084[2] Dicello J F, Wasiolek M, Zaider M. IEEE Trans. Nucl. Sci., 1991, 38: 1203-1209[3] Stapor W J, McDonald P T, Knudson A R et al. IEEE Trans. Nucl. Sci., 1988, 35: 1585-1590[4] Dodd P E, Schwank J R, Shaneyfelt M R et al. IEEE Trans. Nucl. Sci., 2007, 54: 889-893[5] Dodd P E, Schwank J R, Shaneyfelt M R et al. IEEE Trans. Nucl. Sci., 2007, 54: 2303-2311[6] Warren K M, Weller R A, Mendenhall M H et al. IEEE Trans. Nucl. Sci., 2005, 52: 2125-2131[7] Reed R A, Weller R A, Mendenhall M H et al. IEEE Trans. Nucl. Sci., 2007, 54: 2312-2321[8] Weller R A, Reed R A, Warren K M et al. IEEE Trans. Nucl. Sci., 2009, 56: 3098-3108[9] Weller R A, Schrimpf R D, Reed R A et al. IEEE Trans. Nucl. Sci., 2010, 57: 1726-1746[10] Agostinelli S, Allison J, Amako K et al. Nucl. Instrum. Methods Phys. Res. A, 2003, 506: 250-303[11] Huhtinen M, Faccio F. Nucl. Instrum. Methods Phys. Res. A, 2000, 450: 155-172[12] Warren K M. Sensitive Volume Models for Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environment (Ph. D Thesis). Tennessee: Vanderbilt University, 2010[13] Ball D R, Warren K M, Weller R A et al. IEEE. Trans. Nucl. Sci., 2006, 53: 1794-1798[14] Loke A L S. Process Integration Issues of Low-Permittivity Dielectrics with Copper for High-Performance Interconnects (Ph. D Thesis). Stanford: Stanford University, 1999[15] Shockley W. Solid State Elec., 1961, 2: 35-67[16] Cucinotta F A, Katz R, Wilson J W et al. Faculty Publications, Dept of Physics and Astronomy, 1996, 62[17] Waligorski M P R, Hamm R N, Katz R. Int. J. Raiat. Inst., 1986, 11: 309-319

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GENG Chao, LIU Jie, ZHANG Zhan-Gang, XI Kai, GU Song, HOU Ming-Dong, SUN You-Mei, DUAN Jing-Lai, YAO Hui-Jun, MO Dan and LUO Jie. Modeling the applicability of linear energy transfer on single event upset occurrence[J]. Chinese Physics C, 2013, 37(6): 066001. doi: 10.1088/1674-1137/37/6/066001
GENG Chao, LIU Jie, ZHANG Zhan-Gang, XI Kai, GU Song, HOU Ming-Dong, SUN You-Mei, DUAN Jing-Lai, YAO Hui-Jun, MO Dan and LUO Jie. Modeling the applicability of linear energy transfer on single event upset occurrence[J]. Chinese Physics C, 2013, 37(6): 066001.  doi: 10.1088/1674-1137/37/6/066001 shu
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Received: 2012-07-26
Revised: 1900-01-01
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Modeling the applicability of linear energy transfer on single event upset occurrence

    Corresponding author: GENG Chao,
    Corresponding author: LIU Jie,
  • Received Date: 2012-07-26
  • Accepted Date: 1900-01-01
  • Available Online: 2013-06-05

Abstract: Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.

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