Application of stratified implantation for silicon micro-strip detectors

LI Hai-Xia; LI Zhan-Kui; WANG Fang-Cong; LI Rong-Hua; CHEN Cui-Hong; WANG Xiu-Hua; RONG Xin-Juan; LIU Feng-Qiong; WANG Zhu-Sheng; LI Chun-Yan; ZU Kai-Ling; LU Zi-Wei

doi:10.1088/1674-1137/39/6/066005

Chinese Physics C> 2015, Vol. 39> Issue(6) : 066005 DOI: 10.1088/1674-1137/39/6/066005

Application of stratified implantation for silicon micro-strip detectors

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Abstract：
In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P⁺ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.

References

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LI Hai-Xia, LI Zhan-Kui, WANG Fang-Cong, LI Rong-Hua, CHEN Cui-Hong, WANG Xiu-Hua, RONG Xin-Juan, LIU Feng-Qiong, WANG Zhu-Sheng, LI Chun-Yan, ZU Kai-Ling and LU Zi-Wei. Application of stratified implantation for silicon micro-strip detectors[J]. Chinese Physics C, 2015, 39(6): 066005. doi: 10.1088/1674-1137/39/6/066005

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Received: 2014-09-18
Revised: 1900-01-01

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