A highly pixelated CdZnTe detector based on Topmetal-II<sup>-</sup> sensor

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doi:10.1088/1674-1137/41/4/046003

Chinese Physics C> 2017, Vol. 41> Issue(4) : 046003 DOI: 10.1088/1674-1137/41/4/046003

A highly pixelated CdZnTe detector based on Topmetal-II^- sensor

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Abstract：
Topmetal-Ⅱ^- is a low noise CMOS pixel direct charge sensor with a pitch of 83 μm. CdZnTe is an excellent semiconductor material for radiation detection. The combination of CdZnTe and the sensor makes it possible to build a detector with high spatial resolution. In our experiments, an epoxy adhesive is used as the conductive medium to connect the sensor and cadmium zinc telluride (CdZnTe). The diffusion coefficient and charge efficiency of electrons are measured at a low bias voltage of -2 V, and the image of a single alpha particle is clear with a reasonable spatial resolution. A detector with such a structure has the potential to be applied in X-ray imaging systems with further improvements of the sensor.
- Topmetal ,
- pixel ,
- CdZnTe

References

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null. A highly pixelated CdZnTe detector based on Topmetal-II^- sensor[J]. Chinese Physics C, 2017, 41(4): 046003. doi: 10.1088/1674-1137/41/4/046003

null. A highly pixelated CdZnTe detector based on Topmetal-II^- sensor[J]. Chinese Physics C, 2017, 41(4): 046003. doi: 10.1088/1674-1137/41/4/046003 shu

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Received: 2016-11-11

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Supported by National Natural Science Foundation of China (11375073, 11305072, U1232206)

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A highly pixelated CdZnTe detector based on Topmetal-II^- sensor

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Received Date: 2016-11-11
Available Online: 2017-04-05

Fund Project: Supported by National Natural Science Foundation of China (11375073, 11305072, U1232206)

Abstract: Topmetal-Ⅱ^- is a low noise CMOS pixel direct charge sensor with a pitch of 83 μm. CdZnTe is an excellent semiconductor material for radiation detection. The combination of CdZnTe and the sensor makes it possible to build a detector with high spatial resolution. In our experiments, an epoxy adhesive is used as the conductive medium to connect the sensor and cadmium zinc telluride (CdZnTe). The diffusion coefficient and charge efficiency of electrons are measured at a low bias voltage of -2 V, and the image of a single alpha particle is clear with a reasonable spatial resolution. A detector with such a structure has the potential to be applied in X-ray imaging systems with further improvements of the sensor.