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Chinese Physics C> 2005, Vol. 29> Issue(S1) : 32-36 

Experimental studies on FeS2 films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method

  •  Key Laboratory of Nuclear Analysis Techniques,Institute of High Energy Physics,CAS,Beijing 100049,China2 Beijing Synchrotron Radication Laboratory,Institute of High Energy Physics,CAS,Beijing 100049,China

  • Both conventional X-ray diffraction (XRD) and synchrotron radiation surface X-ray diffraction methods were used to study FeS2 films prepared by magnetron sputtering on Si (100) and glass substrates for comparison. The results show that the preferred orientation of FeS2 along (311) direction, which might be due to the well-matched crystal lattice for FeS2 and Si (100), is mistaken. The peak at about 56°with extremely strong intensity comes from the (311) crystal plane of the silicon substrate, other than the preferred orientation of FeS2. The conclusion is proved by both calculation and experimental measurements in present paper.
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ZHANG Hui, WANG Bao-Yi, ZHANG Zhe, WANG Ping, WEI Long, JIA Quan-Jie and WANG Yu-Zhu. Experimental studies on FeS2 films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method[J]. Chinese Physics C, 2005, 29(S1): 32-36.
ZHANG Hui, WANG Bao-Yi, ZHANG Zhe, WANG Ping, WEI Long, JIA Quan-Jie and WANG Yu-Zhu. Experimental studies on FeS2 films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method[J]. Chinese Physics C, 2005, 29(S1): 32-36. shu
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Received: 2005-10-28
Revised: 1900-01-01
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Experimental studies on FeS2 films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method

    Corresponding author: ZHANG Hui,
  • Key Laboratory of Nuclear Analysis Techniques,Institute of High Energy Physics,CAS,Beijing 100049,China2 Beijing Synchrotron Radication Laboratory,Institute of High Energy Physics,CAS,Beijing 100049,China
  • Received Date: 2005-10-28
  • Accepted Date: 1900-01-01
  • Available Online: 2005-01-02

Abstract: Both conventional X-ray diffraction (XRD) and synchrotron radiation surface X-ray diffraction methods were used to study FeS2 films prepared by magnetron sputtering on Si (100) and glass substrates for comparison. The results show that the preferred orientation of FeS2 along (311) direction, which might be due to the well-matched crystal lattice for FeS2 and Si (100), is mistaken. The peak at about 56°with extremely strong intensity comes from the (311) crystal plane of the silicon substrate, other than the preferred orientation of FeS2. The conclusion is proved by both calculation and experimental measurements in present paper.

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