Experiment on Hard X-rays Damage Effects for Memory

GUO Hong-Xia; HAN Fu-Bin; CHEN Yu-Sheng; LUO Jian-Hui; GONG Jian-Cheng; XIE Ya-Ning; HUANG Yu-Ying; HE Wei; HU Tian-Dou

Chinese Physics C> 2003, Vol. 27> Issue(S1) : 5-9

Experiment on Hard X-rays Damage Effects for Memory

Northwest Institute of Nuclear Technology,Xi'an 710024,China2 Institute of High Energy Physics,CAS,Beijing 100039,China

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Abstract：
Experimental results of X-rays dose enhancement effects are given for floating ROM and SRAM with different integration from 16k to 4M irradiated by 20—100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source γ-rays.The ratio of radiation damage to the them irradiated with two sources are measured.The relationship of radiation hardness of SRAM versus different integration for γ-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented.

References

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GUO Hong-Xia, HAN Fu-Bin, CHEN Yu-Sheng, LUO Jian-Hui, GONG Jian-Cheng, XIE Ya-Ning, HUANG Yu-Ying, HE Wei and HU Tian-Dou. Experiment on Hard X-rays Damage Effects for Memory[J]. Chinese Physics C, 2003, 27(S1): 5-9.

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Received: 2003-11-21
Revised: 1900-01-01

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