×
近期发现有不法分子冒充我刊与作者联系,借此进行欺诈等不法行为,请广大作者加以鉴别,如遇诈骗行为,请第一时间与我刊编辑部联系确认(《中国物理C》(英文)编辑部电话:010-88235947,010-88236950),并作报警处理。
本刊再次郑重声明:
(1)本刊官方网址为cpc.ihep.ac.cn和https://iopscience.iop.org/journal/1674-1137
(2)本刊采编系统作者中心是投稿的唯一路径,该系统为ScholarOne远程稿件采编系统,仅在本刊投稿网网址(https://mc03.manuscriptcentral.com/cpc)设有登录入口。本刊不接受其他方式的投稿,如打印稿投稿、E-mail信箱投稿等,若以此种方式接收投稿均为假冒。
(3)所有投稿均需经过严格的同行评议、编辑加工后方可发表,本刊不存在所谓的“编辑部内部征稿”。如果有人以“编辑部内部人员”名义帮助作者发稿,并收取发表费用,均为假冒。
                  
《中国物理C》(英文)编辑部
2024年10月30日

Study on Irradiation Damage of Bi-Doped PbWO4 Crystal

Get Citation
LIANG Ling, GU Mu, DUAN Yong, MA Xiao-Hui, LIU Feng-Song, WU Xiang-Hui, QIU Long-Qing, CHEN Ming-Nan, LIAO Jing-Ying, SHEN Ding-Zhong, ZHANG Xin, GONG Bo, XUE Xuan-Ping, Study on Irradiation Damage of Bi-Doped PbWO4 Crystal[J]. Chinese Physics C, 2003, 27(6): 526-531.
LIANG Ling, GU Mu, DUAN Yong, MA Xiao-Hui, LIU Feng-Song, WU Xiang-Hui, QIU Long-Qing, CHEN Ming-Nan, LIAO Jing-Ying, SHEN Ding-Zhong, ZHANG Xin, GONG Bo, XUE Xuan-Ping, Study on Irradiation Damage of Bi-Doped PbWO4 Crystal[J]. Chinese Physics C, 2003, 27(6): 526-531. shu
Milestone
Received: 2002-11-15
Revised: 1900-01-01
Article Metric

Article Views(3442)
PDF Downloads(649)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Study on Irradiation Damage of Bi-Doped PbWO4 Crystal

    Corresponding author: GU Mu,
  • Department of Physics,Tongji University,Shanghai 200092,China2 Laboratory of Functional Inorganic Materials,Chinese Academy of Sciences,Shanghai 200050,China3 Shanghai Key Laboratory of Metal-Functional Materials,Shanghai 200940,China

Abstract: The luminescence and point defects of pure lead tungstate crystals (PbWO4) and Bismuth (Bi) doping crystal (PbWO4:Bi)grown by modified Bridgman method are studied. It is found that irradiation results in the great change of the transmission and X-ray excited emission after γ-ray irradiation about 4 Mrad dose. The defects in PbWO4 crystal have been studied by means of positron annihilation lifetime and X-ray photoelectron spectra. The results show that Bi dopant suppresses the concentrations of positron capture centers and low-valent oxygen ions.After γ-ray irradiation,in the pure crystal the concentration of lead vacancy (VPb) is decreased and that of low-valent oxygen increased; on the contrary,in Bi dopant crystal the concentrations of positron capture centers increased and that of low-valent oxygen ions suppressed. It is tentatively proposed that Bi3+ dopants would mainly occupy the sites of lead vacancies resulted from Pb volatilization. And irradiation changes the chemical valence of Bi element,which is Bi3+→Bi5+.The Bi5+ will replace the lattice W6+ ions and it will cause some (WO4)2- replaced by (BiO3+VO).

    HTML

Reference (1)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return