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Chinese Physics C> 2003, Vol. 27> Issue(S1) : 118-121 

X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate

  •  Microelectronics R&D Center,CAS,Beijing 100029,China2 Synchrotron Radiation Laboratory,Institute of High Energy Physics,CAS,Beijing 100039,China

  • Because of its validity in reducing transistor noise due to gate parasitic resistance,T-shaped structure has been applied for the fabrication of Pseudomorphic High Electron Mobility Transistor (PHEMT) device widely,X-ray lithography is the best way to fabricate deep-submicron T-shaped structure,because it has many adantages,such as large process latitude、high throughput,extremely long depth of focus、large exposure field sizes,low cost,and so on,and the more important thing is that X-ray lithography technology is relatively mature.In this paper,the home-made X-ray mask process is introduced first,and the influence of blur to the light intensity distribution on the surface of X-ray resist is analyzed,the three layer resist method which is used for the fabrication of deep-submicron T-shaped structure and the 75nm T-shaped structure result which was achieved in BSRF 3B1A beamline are presented lastly.
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    [1] Chen Y, MacIntyre D, Thoms S. Microdnclronic Engineering, 2001,57-58 : 9392 Scott Heetor. J. Vac. Sci. Technol, 1997, B15 (6 ) :25173 Silverman J P. J. Vac. Sci. Technol, 1995 ,B15(6) :21174 Chen A C. J. Vac. Sci. Technol, 1998 ,B16(6) :34855 Yongduck Seo, Ohyun Kim. Jpn. J. Appl. Phys. , Part. 1, 2000,12B :6942

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XIE Cheng-Qing, CHEN Da-Peng, LI Bing, WANG De-Qiang, YE Tian-Chun, PENG Liang-Qiang, YI Fu-Ting, HAN Yong and ZHANG Ju-Fang. X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate[J]. Chinese Physics C, 2003, 27(S1): 118-121.
XIE Cheng-Qing, CHEN Da-Peng, LI Bing, WANG De-Qiang, YE Tian-Chun, PENG Liang-Qiang, YI Fu-Ting, HAN Yong and ZHANG Ju-Fang. X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate[J]. Chinese Physics C, 2003, 27(S1): 118-121. shu
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Received: 2003-11-21
Revised: 1900-01-01
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X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate

    Corresponding author: XIE Cheng-Qing,
  • Microelectronics R&D Center,CAS,Beijing 100029,China2 Synchrotron Radiation Laboratory,Institute of High Energy Physics,CAS,Beijing 100039,China
  • Received Date: 2003-11-21
  • Accepted Date: 1900-01-01
  • Available Online: 2003-01-02

Abstract: Because of its validity in reducing transistor noise due to gate parasitic resistance,T-shaped structure has been applied for the fabrication of Pseudomorphic High Electron Mobility Transistor (PHEMT) device widely,X-ray lithography is the best way to fabricate deep-submicron T-shaped structure,because it has many adantages,such as large process latitude、high throughput,extremely long depth of focus、large exposure field sizes,low cost,and so on,and the more important thing is that X-ray lithography technology is relatively mature.In this paper,the home-made X-ray mask process is introduced first,and the influence of blur to the light intensity distribution on the surface of X-ray resist is analyzed,the three layer resist method which is used for the fabrication of deep-submicron T-shaped structure and the 75nm T-shaped structure result which was achieved in BSRF 3B1A beamline are presented lastly.

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