Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions

WANG Zhuo; LIU Chang-Long; LIU Tian-Yu; WU Pei; ZHANG Xiao-Dong; LI Wen-Xia; LI Meng-Kai; YUAN Bing; LI Wen-Run

Chinese Physics C> 2008, Vol. 32> Issue(S2) : 265-269

Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions

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Abstract：
Crystalline n-type Si (100) wafers were implanted at room temperature with
160 keV He ions to a fluence of 5×10¹⁶cm^－2 or 40 keV H ions to a fluence of 1×10¹⁶cm^－2, singly or in combination, followed by thermal annealing. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) have been used to investigate ion implantation induced surface phenomena and thermal evolution of micro-defects. SEM results show that successive implantation of He and H ions could induce surface blistering and exfoliation of Si at high thermal annealing temperature. AFM observations reveal that the surface exfoliation is mainly achieved at the sample depth corresponding to the projected range of H ions. XTEM observations demonstrate that the occurrence of surface blister or exfoliation on silicon can be attributed to the important role of He implantation in the thermal growth of H induced defects.

References

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WANG Zhuo, LIU Chang-Long, LIU Tian-Yu, WU Pei, ZHANG Xiao-Dong, LI Wen-Xia, LI Meng-Kai, YUAN Bing and LI Wen-Run. Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions[J]. Chinese Physics C, 2008, 32(S2): 265-269.

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Received: 2008-07-17
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Study of surface exfoliation on crystalline silicon induced by Co-implantation of He and H ions

Corresponding author: WANG Zhuo,

Received Date: 2008-07-17
Accepted Date: 1900-01-01
Available Online: 2008-01-03

Abstract: Crystalline n-type Si (100) wafers were implanted at room temperature with
160 keV He ions to a fluence of 5×10¹⁶cm^－2 or 40 keV H ions to a fluence of 1×10¹⁶cm^－2, singly or in combination, followed by thermal annealing. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) have been used to investigate ion implantation induced surface phenomena and thermal evolution of micro-defects. SEM results show that successive implantation of He and H ions could induce surface blistering and exfoliation of Si at high thermal annealing temperature. AFM observations reveal that the surface exfoliation is mainly achieved at the sample depth corresponding to the projected range of H ions. XTEM observations demonstrate that the occurrence of surface blister or exfoliation on silicon can be attributed to the important role of He implantation in the thermal growth of H induced defects.