Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells

LIU Yun-Hong; WANG Rong; CUI Xin-Yu; SUN Xu-Fang

Chinese Physics C> 2008, Vol. 32> Issue(S2) : 243-246

Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells

Abstract
HTML
Reference
Related

PDF

Abstract：
Displacement damage dose is applied to analyze the irradiation effects of 2 MeV carbon ions and 0.28~20 MeV protons on homemade GaAs/Ge solar cells. The NIEL for each ion is modified by taking into account the distribution of Bragg damage peak in the active region of the solar cells, and then the corresponding displacement damage dose is obtained. It is found that with the aid of displacement damage dose, the degradation of P_max of GaAs/Ge solar cells induced by carbon ions and protons with various energies and fluences could be characterized with a simple curve. Obviously, the displacement damage dose approach simplifies the description of ion irradiation effects on homemade GaAs/Ge solar cells.

References

[1]

. XIANG Xian-Bi et al. Solar Energy Materials Solar Cells,1998, 55(4): 3132. XIANG Xian-Bi et al. Chinese Journal of Semiconductors,2001, 22(6): 7103. WANG Rong et al. Solar Energy Materials Solar Cells,2006, 90: 10524. WANG Rong et al. Solar Energy Materials Solar Cells,2003, 77: 3515. Erkin, GUO Qi et al. Nuclear Techniques, 2003, 26(9): 697(in Chinese)6. LIU Yun-Hong, WANG Rong, SUN Xu-Fang. NuclearTechniques, 2007, 30(4): 259-261(in Chinese) 7. Anspaugh B E. GaAs Solar Cell Radiation Handbook. Cal-ifornia: JPL Publication, 19968. Messenger S R et al. IEEE Transactions on Nuclear Sci-ence, 1999, 46(6): 15959. Messenger S R et al. IEEE Transactions on Nuclear Sci-ence, 2002, 49(6): 269010. Ziegler J F, Biersack J P, Littmark U. The Stopping andRange of Ions in Material. Pergamon Press: New York,1995

[1]	Mo-Han Liu , Wu Lu , Wu-Ying Ma , Xin Wang , Qi Guo , Cheng-Fa He , Ke Jiang , Xiao-Long Li , Ming-Zhu Xun . Total ionizing dose effects of domestic SiGe HBTs under different dose rates. Chinese Physics C, 2016, 40(3): 036003. doi: 10.1088/1674-1137/40/3/036003
[2]	ZHANG Yong , YANG Jing , ZHANG Wei-Ning . Relativistic effects on the back-to-back correlation functions of boson-antiboson pairs in high energy heavy ion collisions. Chinese Physics C, 2015, 39(3): 034103. doi: 10.1088/1674-1137/39/3/034103
[3]	PANG Dan-Yang . Effects of relativistic kinematics in heavy ion elastic scattering. Chinese Physics C, 2014, 38(2): 024104. doi: 10.1088/1674-1137/38/2/024104
[4]	CHEN Ze , HU Zheng-Guo , CHEN Jin-Da , ZHANG Xiu-Ling , GUO Zhong-Yan , XIAO Guo-Qing , SUN Zhi-Yu , HUANG Wen-Xue , WANG Jian-Song . A simulation study of a dual-plate in-room PET system for dose verification in carbon ion therapy. Chinese Physics C, 2014, 38(8): 088202. doi: 10.1088/1674-1137/38/8/088202
[5]	WANG Shu-Yang , CHEN Ji-Hong , LI Wen-Jian , LIANG Jian-Ping , BO Yong-Heng , MA Xiao-Qi , LIU Jing . Influence of ¹²C⁶⁺ ion irradiation on mutant avermitilis. Chinese Physics C, 2012, 36(11): 1140-1144. doi: 10.1088/1674-1137/36/11/019
[6]	GAO Xin , YANG Sheng-Sheng , FENG Zhan-Zu , ZHANG Lei . Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment. Chinese Physics C, 2012, 36(9): 900-904. doi: 10.1088/1674-1137/36/9/019
[7]	LU Wu , ZHENG Yu-Zhan , WANG Yi-Yuan , REN Di-Yuan , GUO Qi , WANG Zhi-Kuan , WANG Jian-An . Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors. Chinese Physics C, 2011, 35(2): 169-173. doi: 10.1088/1674-1137/35/2/012
[8]	SU You-Wu , LI Zong-Qiang , LI Wu-Yuan , WANG Gui-Ling . Neutron dose measurement in carbon ion radiation therapy at HIRFL (IMP). Chinese Physics C, 2010, 34(5): 548-550. doi: 10.1088/1674-1137/34/5/006
[9]	SHENG Li-Na , SONG Ming-Tao , GAO Da-Qing , HE Yuan , ZHANG Bin , ZHANG Xiao-Qi . Study of the aberrations of the IMP heavy ion microbeam irradiation system. Chinese Physics C, 2009, 33(S2): 26-29. doi: 10.1088/1674-1137/33/S2/007
[10]	QIAN Cong , ZHANG Zheng-Xuan , ZHANG Feng , LIN Cheng-Lu . Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide. Chinese Physics C, 2008, 32(2): 130-134. doi: 10.1088/1674-1137/32/2/011
[11]	LIU Chun-Bao , WANG Zhi-Guang , ZANG Hang , WEI Kong-Fang , YAO Cun-Feng , SHENG Yan-Bin , MA Yi-Zhun , A Benyagoub , M Toulemonde , JIN Yun-Fan . Investigation of PL properties of C-doped SiO₂/Si samples after high energy Pb ion irradiation. Chinese Physics C, 2008, 32(S2): 251-254.
[12]	ZHOU Qing-Ming , ZHANG Hong , LI Qiang , WEI Li-Li , LIU Xin-Guo , GU Meng-Xia , WU Gui-Hong , DAI Zhong-Yin . Rotating wheel filter design and optimization for a uniform depth dose distribution in heavy ion therapy. Chinese Physics C, 2008, 32(S2): 294-298.
[13]	TIAN Hao , ZHANG Zheng-Xuan , HE Wei , YU Wen-Jie , WANG Ru , CHEN Ming . Total dose radiation effects on SOI NMOS transistors with different layouts. Chinese Physics C, 2008, 32(8): 645-648. doi: 10.1088/1674-1137/32/8/011
[14]	LUO Yin-Hong , GONG Jian-Cheng , ZHANG Feng-Qi , GUO Hong-Xia , YAO Zhi-Bin , LI Yong-Hong , GUO Ning . Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment. Chinese Physics C, 2006, 30(1): 79-83.
[15]	XIA Jing-Guang , LI Wen-Jian , WANG Ju-Fang , GUO Chuan-Ling , YANG Jian-She , GAO Qing-Xiang . Effects of Low Priming Dose of Radiation on Cell Cycle Arrest of Tumor Cells Caused by High Dose of Radiation. Chinese Physics C, 2005, 29(2): 201-204.
[16]	Chen Liewen , Zhang Xiaodong , Ge Lingxiao . Isospin Effects on Pre-Equilibrium Nucleon Emission in Heavy-Ion Collisions. Chinese Physics C, 1997, 21(S1): 465-470.
[17]	Liu Changlong , Hou Mingdong , Wang Zhiguang , Cheng Song , Sun Youmei , Zhu Zhiyong , Jin Yunfan , Li Changlin , Wang Yinshu , Meng Qinghua . Dimensional Changes of Amorphous Alloys Under Swift Ar Ion Irradiation. Chinese Physics C, 1997, 21(S4): 93-98.
[18]	Zhu Quanling , Ge Lingxiao , Zhang Xiaodong . Isospin Effects on Dynamics of Heavy Ion Collisions. Chinese Physics C, 1994, 18(S3): 301-306.
[19]	Mao Huishun , Wang Guoliang , Liu Nianzong , Zhang Ge , Zhang Zhuxiang , Zhang Liangsheng , Zhang Caidi , Zheng Linsheng , Zhou Yongshen , Hu Lidong , Zhao Xiaojian , Zhong Xuechu , Tan Yiping , Han Shiwen , D. Green , A. Para , K. Johnson . Study of Radiation Damage of a Tile/Fiber Scintillator Calorimeter. Chinese Physics C, 1992, 16(S4): 376-384.
[20]	ZHANG JING-YE , ZHANG XI-ZHEN . THE ROTATION ALIGNMENT EFFECTS OF g_9/2 PROTON PAIR AND NEUTRON PAIR IN ⁶⁸Ge. Chinese Physics C, 1981, 5(1): 108-112.

Access

Get Citation

LIU Yun-Hong, WANG Rong, CUI Xin-Yu and SUN Xu-Fang. Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells[J]. Chinese Physics C, 2008, 32(S2): 243-246.

LIU Yun-Hong, WANG Rong, CUI Xin-Yu and SUN Xu-Fang. Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells[J]. Chinese Physics C, 2008, 32(S2): 243-246. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2008-07-17
Revised: 1900-01-01

Article Metric

Article Views(4265)
PDF Downloads(642)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells

Corresponding author: LIU Yun-Hong,

Received Date: 2008-07-17

Accepted Date: 1900-01-01

Available Online: 2008-01-03

Abstract: Displacement damage dose is applied to analyze the irradiation effects of 2 MeV carbon ions and 0.28~20 MeV protons on homemade GaAs/Ge solar cells. The NIEL for each ion is modified by taking into account the distribution of Bragg damage peak in the active region of the solar cells, and then the corresponding displacement damage dose is obtained. It is found that with the aid of displacement damage dose, the degradation of P_max of GaAs/Ge solar cells induced by carbon ions and protons with various energies and fluences could be characterized with a simple curve. Obviously, the displacement damage dose approach simplifies the description of ion irradiation effects on homemade GaAs/Ge solar cells.

HTML

Reference (1)

Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article