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Chinese Physics C> 2005, Vol. 29> Issue(S1) : 24-27 

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in GeSi Epitaxy Layers on Si Wafer

  •  Lab of Solid State Microstructures, Center for Advanced Studies in Science and Technology of Microstructures,Department of Physics, Nanjing University, Nanjing 2100932 Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 2100943 BSRF, Institute of High Energy Physics, CAS, Beijing 1000494 Center fro Condense Matter Science, Taiwan University, Taipei

  • This study systematically addresses the effect of temperature on the growth of SiGe compliant substrates. The characteristics of the films were experimentally determined by various techniques, including high resolution X-ray diffraction (HRXRD), surface diffraction, X-ray reflectivity with synchrotron radiation,transmission electron microscopy (TEM) and atomic force microscopy (AFM).In the growth temperature range from 350—600\textcelsius, X-ray diffraction shows that the film was strain relaxed with a Ge content of 32±2%, and TEM indicates that the film is free from dislocations in the temperature range, 400—500\textcelsius.AFM reveals that the optimal temperature for the growth is 450\textcelsius, with a root mean squared surface roughness of 15\AA.
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    [1] . Thanh V L, Yam V, Boucaud P et al. Phys. Rev., 1999,B60: 58512. Schmidt O G, Kienzle O, Hao Y et al. Appl. Phys. Lett.,1999, 74: 12723. Mateeva E, Sutter P, Lagally M G. Appl. Phys. Lett., 1999,74: 5674. Schittenhelm P, Gail M, Brunner J et al. J. Cryst. Growth,1995, 157: 2605. Sunamura H, Fukatsu S, Usami N et al. J. Cryst. Growth,1995, 157: 2656. CHEN H, GUO L W, CUI Q et al. J. Appl. Phys., 1996,75: 11677. LIU J L, Moore C D, U’Ren G D et al. Appl. Phys. Lett.,1999, 75: 15868. Linder K K et al. Appl. Phys. Lett., 1997, 70: 32249. LI J H, PENG C S, WU Y et al. Appl. Phys. Lett., 1997,71: 313210. TAN Wei-Shi, XU Jin, CAI Hong-Ling et al. Nuclear Tech-niques, 2004, 27(6): 413—416(in Chinese)(谭伟石，徐金，蔡宏灵等.核技术，2004, 27(6): 413-416) 11. WU X S, BIE Q S, LIN Z S et al. Mod. Phys. Lett., 1999,B13: 325

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WU Xiao-Shan, CAI Hong-Ling, TAN Wei-Shi, ZHAI Zhang-Yin, WU Zong-Hua, JIA Quan-Jie, ZHENG Hong-Xiang and JIANG Shu-Shen. Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in GeSi Epitaxy Layers on Si Wafer[J]. Chinese Physics C, 2005, 29(S1): 24-27.
WU Xiao-Shan, CAI Hong-Ling, TAN Wei-Shi, ZHAI Zhang-Yin, WU Zong-Hua, JIA Quan-Jie, ZHENG Hong-Xiang and JIANG Shu-Shen. Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in GeSi Epitaxy Layers on Si Wafer[J]. Chinese Physics C, 2005, 29(S1): 24-27. shu
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Received: 2005-10-28
Revised: 1900-01-01
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Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in GeSi Epitaxy Layers on Si Wafer

    Corresponding author: TAN Wei-Shi,
  • Lab of Solid State Microstructures, Center for Advanced Studies in Science and Technology of Microstructures,Department of Physics, Nanjing University, Nanjing 2100932 Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 2100943 BSRF, Institute of High Energy Physics, CAS, Beijing 1000494 Center fro Condense Matter Science, Taiwan University, Taipei
  • Received Date: 2005-10-28
  • Accepted Date: 1900-01-01
  • Available Online: 2005-01-02

Abstract: This study systematically addresses the effect of temperature on the growth of SiGe compliant substrates. The characteristics of the films were experimentally determined by various techniques, including high resolution X-ray diffraction (HRXRD), surface diffraction, X-ray reflectivity with synchrotron radiation,transmission electron microscopy (TEM) and atomic force microscopy (AFM).In the growth temperature range from 350—600\textcelsius, X-ray diffraction shows that the film was strain relaxed with a Ge content of 32±2%, and TEM indicates that the film is free from dislocations in the temperature range, 400—500\textcelsius.AFM reveals that the optimal temperature for the growth is 450\textcelsius, with a root mean squared surface roughness of 15\AA.

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