Fabrication of Silicon Nitride /Refractory Metal Tantalum X-ray Mask and it Application

XIE Cheng-Qing; NIU Jie-Bin; WANG De-Qiang; DONG Li-Jun; CHEN Da-Peng; YI Fu-Ting; ZHANG Ju-Fang

Chinese Physics C> 2005, Vol. 29> Issue(S1) : 140-143

Fabrication of Silicon Nitride /Refractory Metal Tantalum X-ray Mask and it Application

Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,CAS,Beijing 100010,China2 Synchrotron Radiation Laboratory,Institute of High Energy Physics,CAS,Beijing 100049,China

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Abstract：
After more than 30 years research and Development, Proximity X-ray lithography has matured considerably and it has many advantages, such as high resolution, long depth of focus, large process latitude, high throughout ,and so on. For X-ray mask absorber, if Au metal is selected, it can only be plated and may pollute the silicon-based integrated circuits. TaSi film can be dry etching and does not pollute the silicon-based integrated circuits, it is a potential candidate for X-ray mask absorber. In this paper , the home-made silicon nitride /TaSi X-ray mask fabrication process is described, unlike the conventional fabrication process, after e-beam exposure and development, is etched Inductively Coupled Plasma(ICP) etching based on SF₆/CHF₃ gas chemistries is used to pattern the TaSi film,using ZEP520 e-beam resist as the barrier layer directly. Primary experimental result demonstrated this X-ray mask fabrication process is feasible.

References

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. Kitayama, Itoga K. J. Vac. Sci. Technol., 2000, B18(6):2950—29542. Khan M, Han G, Tsvid G et al. J. Vac. Sci. Technol., 2001,B19(6): 2423—24273. Toyota E, Hori T, Khan M et al. J. Vac. Sci. Technol., 2001,B19(6): 2428—24334. Selzer R(B), Heaton J. Microelectronic Engineering, 2000,53: 591—5945. Marumoto K, Yabe H, Aya S. J. Vac. Sci. Technol., 2003,B21(1): 207—2136. CHEN Da-Peng, YE Tian-Chun, XIE Chang-Qing et al.Semiconductors, 2001, 22(12): 1529—1531(in Chinese)(陈大鹏，叶甜春，谢常青等.半导体学报，2001, 22(12):1529-1531)

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XIE Cheng-Qing, NIU Jie-Bin, WANG De-Qiang, DONG Li-Jun, CHEN Da-Peng, YI Fu-Ting and ZHANG Ju-Fang. Fabrication of Silicon Nitride /Refractory Metal Tantalum X-ray Mask and it Application[J]. Chinese Physics C, 2005, 29(S1): 140-143.

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Received: 2005-10-31
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Fabrication of Silicon Nitride /Refractory Metal Tantalum X-ray Mask and it Application

Corresponding author: XIE Cheng-Qing,

Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,CAS,Beijing 100010,China2 Synchrotron Radiation Laboratory,Institute of High Energy Physics,CAS,Beijing 100049,China

Received Date: 2005-10-31
Accepted Date: 1900-01-01
Available Online: 2005-01-02

Abstract: After more than 30 years research and Development, Proximity X-ray lithography has matured considerably and it has many advantages, such as high resolution, long depth of focus, large process latitude, high throughout ,and so on. For X-ray mask absorber, if Au metal is selected, it can only be plated and may pollute the silicon-based integrated circuits. TaSi film can be dry etching and does not pollute the silicon-based integrated circuits, it is a potential candidate for X-ray mask absorber. In this paper , the home-made silicon nitride /TaSi X-ray mask fabrication process is described, unlike the conventional fabrication process, after e-beam exposure and development, is etched Inductively Coupled Plasma(ICP) etching based on SF₆/CHF₃ gas chemistries is used to pattern the TaSi film,using ZEP520 e-beam resist as the barrier layer directly. Primary experimental result demonstrated this X-ray mask fabrication process is feasible.