Simulation of Ion-trapping Instability and Beam Shaking in an Electron Storage Ring

LI YongJun; JIN YuMing; LI WeiMin; SUN BaoGen; YIN LiXin; LIU ZuPing; DIAO CaoZheng; LIU GongFa; ZHOU AnQi; LI JingYi; YU XiangKun; HE XiaoYe

Chinese Physics C> 2000, Vol. 24> Issue(9) : 864-869

Simulation of Ion-trapping Instability and Beam Shaking in an Electron Storage Ring

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

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Abstract：
This paper introduces the simulation results of ion-trapping instability and beam shaking mechanism using strong-weak model in an electron storage ring. These results can reasonably explain some phenomena observed in the HLS storage ring.

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[1]

. LI YongJun et al.High Energy Phys.and Nucl.Phys.(inChinese) ,2000,24:439(李永军等 .高能物理与核物理 ,2000,24:439) 2. Ohmi K .Phys.Rev.,1 997,E55:77503. Baconnier Y .Neutralization of Accelerator Beams by Ionization of Residual Gas.In :P .Bryant,S .Turner.CERN85–1 9,Vol.I.Geneva:1 985.2 67 4. Raubenheimer T O ,Zimmermann F .Phys.Rev.,1995,E52 :54875. Stupakv G V ,Zimmermann F ,Raubenheimer T O .Phys.Rev.,1995,E52 :5499

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LI YongJun, JIN YuMing, LI WeiMin, SUN BaoGen, YIN LiXin, LIU ZuPing, DIAO CaoZheng, LIU GongFa, ZHOU AnQi, LI JingYi, YU XiangKun and HE XiaoYe. Simulation of Ion-trapping Instability and Beam Shaking in an Electron Storage Ring[J]. Chinese Physics C, 2000, 24(9): 864-869.

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Received: 1999-07-06
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Simulation of Ion-trapping Instability and Beam Shaking in an Electron Storage Ring

Corresponding author: LI YongJun,

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

Received Date: 1999-07-06
Accepted Date: 1900-01-01
Available Online: 2000-09-05

Abstract: This paper introduces the simulation results of ion-trapping instability and beam shaking mechanism using strong-weak model in an electron storage ring. These results can reasonably explain some phenomena observed in the HLS storage ring.