The Study of the Silicon Microstrip Detector

MAO Yu-Fang; GUO Zhao-Qiao; ZHANG Xiu-Feng

Chinese Physics C> 1993, Vol. 17> Issue(9) : 784-789

The Study of the Silicon Microstrip Detector

Institute of High Energy physios,Beijing 100039Institute of Atomic Energy,Beijing 102413

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Abstract：
A silicon microstrip detector has been fabricated by the new method of planar process.A high-ohmic (～3kΩ.cm)n-doped silicon crystal,oriented in the <111> direction and 400μm thick is used as base material.The sensitive area of the detector (18mm×12mm)is covered with p⁺ implanted diode strips and Al contacts (300 strips,20μm width and 40μm pitch).The leakage current is 5×10^－9A at the reverse bias voltage of 100V.The distribution of charge collections of the silicon microstrip detector was measured and 5.3μm of the spatial resolution was obtained.

References

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MAO Yu-Fang, GUO Zhao-Qiao and ZHANG Xiu-Feng. The Study of the Silicon Microstrip Detector[J]. Chinese Physics C, 1993, 17(9): 784-789.

MAO Yu-Fang, GUO Zhao-Qiao and ZHANG Xiu-Feng. The Study of the Silicon Microstrip Detector[J]. Chinese Physics C, 1993, 17(9): 784-789. shu

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Received: 1900-01-01
Revised: 1900-01-01

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