Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction

HE Qing; JIA Quan-Jie; JIANG Xiao-Ming; CUI Jian; JIANG Zui-Min

Chinese Physics C> 2003, Vol. 27> Issue(S1) : 49-52

Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction

Institute of High Energy Physics,CAS,Beijing 100039,China2 Surface Physics National Key Lab.,Fudan Univeresity,Shanghai 200433,China

Abstract
HTML
Reference
Related

PDF

Abstract：
The microstructure and morphology of Ge quantum dots grown on Si(001) with varied coverage of Si caplayer has been studied by grazing incident eiffraction (GID) and atomic force microscpe(AFM) respectively.It is found that the composition as well as the morphology varies obviously with small change of coverage of Si caplayer.

References

[1]

Boucaud P, Thanh V Le,Yam V et al. Mat. Sci. Eng. , 2002 ,B89 :36 ;2 Eaglesham D J,Cerullo M, Phys. Rev. Lett. ,1990,64: 19433 LIAO X Z,ZOU J, Cockayne D J H et al. Phys. Rev. , 1999,B60: 156054 Stangl J,Daniel A ,Holy V et al. Appl. Phys. Lett. ,2001 ,79: 14745 LTAO X Z, ZOU J et al. Appl. Phys. Lett. , 2000,77 : 13046 JTANG Z M, JlANG X M, JlANG W R et al. Appl. Phys. Lett. ,2000,76 :33977 Wiehach Th, Schmidhauer M et al. Phys. Rev. ,2000 ,B61:55718 Miller P D, LIU Chuan-Pu et al. Appl. Phys. Lett,1999,75: 469 WANG X, JIANC Z M et al. Appl. Phys. Lett. ,1997,71:354310 JIANC XM, JIA Q J et al. High Energy Phys. and Nucl. Phys. 2000,24: 1185 (in Chinese)(姜晓明，贾全杰等.高能物理与接物理，2000,24;1185)

[1]	LÜ Li-Jun , BAI Hong-Bo , ZHANG Jin-Fu , DONG Hong-Fei . Mixed symmetry states and electromagnetic transition in the N=Z nucleus ²⁸Si. Chinese Physics C, 2014, 38(10): 104102. doi: 10.1088/1674-1137/38/10/104102
[2]	WANG Zhuo , GAO Yu-Jie , LI Meng-Kai , ZHU Fei , ZHANG Da-Cheng , LIU Chang-Long . He and H sequential implantation induced surface blistering and exfoliation of Si covered with oxide layer. Chinese Physics C, 2013, 37(1): 016001. doi: 10.1088/1674-1137/37/1/016001
[3]	Khudair Falih , ZHANG Jin-Fu , BAI Hong-Bo . Mixed symmetry states and isospin excitation in the N=Z nucleus ²⁸Si. Chinese Physics C, 2009, 33(S1): 46-48. doi: 10.1088/1674-1137/33/S1/015
[4]	ZHAI Chen-Yang , SUN Wei-Li , Efrem S , ZHANG Ben-Ai . ²⁸Si-Nucleon Scattering Analysis by the Coupled-Channel Optical Model with Dispersion Relation. Chinese Physics C, 2007, 31(3): 240-246.
[5]	LUO Wen-Yun , WANG Chao-Zhuang , HE Xin-Fu , FAN Sheng , HUANG Xiao-Long , WANG Chuan-Shan . Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs. Chinese Physics C, 2006, 30(11): 1088-1090.
[6]	Fan Ying , REN Zhong-Zhou . Theoretical Studies on Electron Scattering of S and Si Isotopes. Chinese Physics C, 2006, 30(10): 983-987.
[7]	WU Xiao-Shan , CAI Hong-Ling , TAN Wei-Shi , ZHAI Zhang-Yin , WU Zong-Hua , JIA Quan-Jie , ZHENG Hong-Xiang , JIANG Shu-Shen . Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in GeSi Epitaxy Layers on Si Wafer. Chinese Physics C, 2005, 29(S1): 24-27.
[8]	LIU Chang-Long . Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon. Chinese Physics C, 2004, 28(9): 1013-1016.
[9]	ZHONG Xian-Hui , TAN Yu-Hong , NING Ping-Zhi . Shell Anomalies of Mg, Si and S Isotopes. Chinese Physics C, 2003, 27(9): 794-797.
[10]	WU Xiao-Shan , TAN Wei-Shi , JIANG Shu-Sheng , WU Zhong-Hua , DING Yong-Fan , . Microstructures of Ge/Si Superlattices Growtn at Low Temperature. Chinese Physics C, 2003, 27(8): 739-743.
[11]	ZHENG Wen-Li , JIA Quan-Jie , JIANG Xiao-Ming , JIANG Zui-Min . Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection. Chinese Physics C, 2001, 25(12): 1231-1237.
[12]	WANG SuFang , Cavallaro Sl , JIN GenMing , Grzeszczuk A , Zipper W . Binary Reaction and Fusion Reaction in ²⁸Si+¹²C. Chinese Physics C, 2000, 24(10): 933-939.
[13]	JIANG XiaoMing , JIA QuanJie , ZHENG WenLi , LIU Peng , XIAN DingChang , JIANG ZuiMin , WANG Xun . Development of Synchrotron Radiation X-Ray Grazing Incident Diffraction Method. Chinese Physics C, 2000, 24(12): 1185-1190.
[14]	An Zhu . Microscopic Analysis of Proton Scattering from ²⁸Si at 22MeV. Chinese Physics C, 1995, 19(10): 873-878.
[15]	Han Rongdian , Weng Huimin , Zhou Xianyi , Xu Jihua , Zhu Jingsheng , Li Xiaoguang , Sha Jian , Wang Jingcheng . Research for Crystallization of Metallic Glass Pd_79.5Ni₄Si_16.5. Chinese Physics C, 1993, 17(S1): 33-37.
[16]	HAN Rong-Dian , WENG Hui-Min , ZHOU Xian-Yi , XU Ji-Hua , ZHU Jing-Sheng , LI Xiao-Guang , SHA Jian , WANG Jing-Cheng . Research for Crystallization of Metallic Glass Pd_79.5Ni₄Si_16.5 by Slow Positron Beam. Chinese Physics C, 1993, 17(4): 300-304.
[17]	Zheng Jiwen , Zheng Pingzi , Liu Guoxing , Chen Keliang , Wang Sufang , Bai Xingping , Yu Xian , Zhang Huanqiao , Xu Jincheng , Liu Zuhua , Ruan Ming , Lu Jun , Xu Kan . Measurement of Complete Fusion Excitation Function of ¹⁶O + ²⁸Si Reaction. Chinese Physics C, 1992, 16(S3): 227-234.
[18]	ZHENG Ji-Wen , ZHENG Zi-Ping , LIU Guo-Xing , CHEN Ke-Liang , WANG Su-Fang , BAI Xing-Ping , YU Xian , ZHANG Huan-Qiao , XU Jin-Cheng , LIU Zu-Hua , RUAN Ming , LV Jun , XU Kan . Measurement of the Complets Fusion Excitation Function for the ¹⁶O+²⁸Si Reaction. Chinese Physics C, 1992, 16(7): 640-646.
[19]	ZHENG Ji-Wen , LIANG Guo-Zhao , LIU Hong-Tao , BAI Xing-Ping , MA Jun , YAN Jian-Gang . MEASUREMENT OF THE COMPLETE FUSION EXCITATION FUNCTION FOR ¹²C+²⁸Si REACTION. Chinese Physics C, 1986, 10(6): 704-710.
[20]	SHEN Wen-Qing , YIN Shu-Zhi , GUO Zhong-Yan , ZHU Yong-Tai , CHEN Ju-Shen , WU En-Jiu , GUO Chi-Di , FENG En-Pu , XIE Yuan-Xiang . A MEASUREMENT OF THE ELASTIC SCATTERING FOR REACTION ¹²C+²⁸Si AT ENERGIES 56MeV—69MeV. Chinese Physics C, 1984, 8(5): 628-632.

Access

Get Citation

HE Qing, JIA Quan-Jie, JIANG Xiao-Ming, CUI Jian and JIANG Zui-Min. Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction[J]. Chinese Physics C, 2003, 27(S1): 49-52.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2003-11-21
Revised: 1900-01-01

Article Metric

Article Views(4387)
PDF Downloads(563)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction

Corresponding author: HE Qing,

Institute of High Energy Physics,CAS,Beijing 100039,China2 Surface Physics National Key Lab.,Fudan Univeresity,Shanghai 200433,China

Received Date: 2003-11-21

Accepted Date: 1900-01-01

Available Online: 2003-01-02

Abstract: The microstructure and morphology of Ge quantum dots grown on Si(001) with varied coverage of Si caplayer has been studied by grazing incident eiffraction (GID) and atomic force microscpe(AFM) respectively.It is found that the composition as well as the morphology varies obviously with small change of coverage of Si caplayer.

HTML

Reference (1)

Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article