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Abstract:
Synchrotron radiation X-ray grazing incident diffraction (GID) method was developed based on the five-circle diffractometer in the Diffuse Scattering Station at Beijing Synchrotron Radiation Facility. The lateral strain induced by the Ge/Si quantum dotswas measured successfully, which showed the capability of the GID method in measuring weak signals from surface structures. The results showed that the formation of Ge/Si quantum dots caused both the lateral expansion-strain and contraction-strain in the surface layer of Si(001) substrate.
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